Effect of Annealing Ambient on Structural and Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitors with Pt Gate Electrode and HfO_2 Gate Dielectric
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概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 2011-01-01
著者
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CHOI Chel-Jong
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chon
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YOON Jong-Won
Department of Advanced Materials Science and Engineering, Dankook University
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CHANDRA S.
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chon
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Yoon Jong-won
Department Of Advanced Materials Science And Engineering Dankook University
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Choi Chel-jong
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center (sprc) Chonbu
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Yoon Jong-won
Dep. Of Advanced Materials Sci. And Engineering Dankook Univ.
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Choi Chel-jong
School Of Semiconductor And Chemical Engineering Semiconductor Physics Res. Center (sprc) Chonbuk Na
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Chandra S.
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center (sprc) Chonbu
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Yoon Jong-won
Department Of Advanced Materials Engineering Dong-eui University
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Park Yun-chang
Measurement And Analysis Division National Nanofab Center (nnfc)
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Jeong Myung-il
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center (sprc) Chonbu
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Chandra S.
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center (sprc) Chonbu
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