Jung Jongwan | Department Of Nano Science And Technology Sejong University
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概要
関連著者
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Jung Jongwan
Department Of Nano Science And Technology Sejong University
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Cho Won-ju
Department Of Electronic Material Engineering Kwangwoon University
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Kim Eun
Quantum-function Spinics Lab. And Department Of Physics Hanyang University
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Kim Seon
Quantum-function Spinics Lab. And Department Of Physics Hanyang University
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Koo Hyun-mo
Department Of Electronic Material Engineering Kwangwoon University
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Lee Dong
Quantum-function Spinics Lab. And Department Of Physics Hanyang University
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Paik Kee
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Lee Duck
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Kim Kinam
Semiconductor R & D Center Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Park Byung
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Moon Chang-rok
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Yoo Jong
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Kim Dae
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Hwang Sung
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Lee Yong
Semiconductor Physics Research Center and School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Republic of Korea
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Kim Eun
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
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Lee Dong
Quantum-Function Research Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
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KIM Eun
Quantun-Function Spinics Lab. and Dept. of Physics, Hanyang University
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Kim Seon
Hanyang Univ. Seoul Kor
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KIM Kinam
Semiconductor R&D Center, Samsung Electronics Co. Ltd.
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Kim Eun
Quantum-function Spinics Lab. Department Of Physics Hanyang University
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Kim Seon
Quantum-function Spinics Lab. Department Of Physics Hanyang University
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Cho Won-Ju
Department of Electronic Materials Engineering, Kwangwoon University
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Lee Yun
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Cho Won-ju
Electronics Materials Kwangwoon University
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LEE Dong
Quantum-Function Spinics Lab. and Department of Physics, Hanyang University
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KOO Hyun-Mo
Department of Electronic Material Engineering, Kwangwoon University
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Lee Yong
Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Koo Chang
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Shin Jong
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Lee Yong
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Kim Kinam
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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PARK Byung
Semiconductor Research Center, Memory Division, Semiconductor Business, Samsung Electronics Co.
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MOON Chang-Rok
Semiconductor Research Center, Memory Division, Semiconductor Business, Samsung Electronics Co.
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KIM Dae
Semiconductor Research Center, Memory Division, Semiconductor Business, Samsung Electronics Co.
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YOO Jong
Semiconductor Research Center, Memory Division, Semiconductor Business, Samsung Electronics Co.
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YOO Young
Semiconductor Research Center, Memory Division, Semiconductor Business, Samsung Electronics Co.
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JON Yeol
Semiconductor Research Center, Memory Division, Semiconductor Business, Samsung Electronics Co.
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BANG Suk
Semiconductor Research Center, Memory Division, Semiconductor Business, Samsung Electronics Co.
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CHO Young
Semiconductor Research Center, Memory Division, Semiconductor Business, Samsung Electronics Co.
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HWANG Sung
Semiconductor Research Center, Memory Division, Semiconductor Business, Samsung Electronics Co.
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PARK Doo.
Semiconductor Research Center, Memory Division, Semiconductor Business, Samsung Electronics Co.
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JUNG Hee
Semiconductor Research Center, Memory Division, Semiconductor Business, Samsung Electronics Co.
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LEE Kang
Semiconductor Research Center, Memory Division, Semiconductor Business, Samsung Electronics Co.
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NOH Hyun
Semiconductor Research Center, Memory Division, Semiconductor Business, Samsung Electronics Co.
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Noh Hyun
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Bang Suk
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Jon Yeol
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Park Doo.
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Lee Kang
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Cho Young
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Yoo Young
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Jung Hee
Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.
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Paik Kee
Semiconductor Research Center, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
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Lee Yong
Semiconductor Research Center, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
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Kwon Doo-Won
Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-ri, Giheung-eup, Yongin, Gyeonggi 449-711, Korea
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Lee Kang
Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea
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Kim Seon
Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
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Yoo Jong
Semiconductor Research Center, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
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Park Byung
Semiconductor Research Center, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
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Hwang Sung
Semiconductor Research Center, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
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Koo Hyun-Mo
Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul 139-701, Korea
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Jung Myung-Ho
Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul 139-701, Korea
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Kim Jinho
Semiconductor R&D Center, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-ri, Giheung-eup, Yongin, Gyeonggi 449-711, Korea
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Moon Chang-Rok
Semiconductor Research Center, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
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Kim Kinam
Semiconductor Research Center, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
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Jung Jongwan
Department of nano-science and technology, Sejong University, 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Korea
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Kim Kwan-Su
Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul 139-701, Korea
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Park Goon-Ho
Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul 139-701, Korea
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Kim Dae
Semiconductor Research Center, Memory Division, Samsung Electronics Co., Ltd., San #24 Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, Korea
著作論文
- Deep Trench Isolation for Pixel Crosstalk Suppression in Active Pixel Sensor with 1.7μm pixel pitch
- Low temperature Poly-Si TFT nonvolatile memory devices with In_2O_3 nano-particles embedded in polyimide
- Deep Trench Isolation for Crosstalk Suppression in Active Pixel Sensors with 1.7 μm Pixel Pitch
- Decreasing Dark Current of Complementary Metal Oxide Semiconductor Image Sensors by New Postmetallization Annealing and Ultraviolet Curing
- Fabrication of Low Temperature Polycrystalline Silicon Thin-Film Transistor Nonvolatile Memory Devices for Digital Memory on Glass Applications
- Charge Trapping Characteristics of Variable Oxide Thickness Tunnel Barrier with SiO2/HfO2 or Al2O3/HfO2 Stacks for Nonvolatile Memories