SONOS-Type Flash Memory with HfO_2 Thinner than 4nm as Trapping Layer Using Atomic Layer Deposition
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概要
- 論文の詳細を見る
- 2010-05-01
著者
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KIM Young
National Nanofab Center
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KANG Min
National Nanofab Center
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OH Jae
National Nanofab Center
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YOO Dong
National Nanofab Center
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LEE Hi
Dept. of Electronic Engineering, Chungnam National University
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Lee Hi
Dept. Of Electronic Engineering Chungnam National University
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SONG Myeong
National Nanofab Center
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LIM Sung
National Nanofab Center
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OH Jae
Dept. of Electronic Engineering, Chungnam National University
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CHOI Kwang
Dept. of Electronic Engineering, Chungnam National University
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SONG Myeong
Dept. of Electronic Engineering, Chungnam National University
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YOO Dong
Dept. of Electronic Engineering, Chungnam National University
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PARK Jeong
Dept. of Electronic Engineering, Chungnam National University
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LEE Ga
Dept. of Electronic Engineering, Chungnam National University
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Yoo Dong
Dept. Of Electronic Engineering Chungnam National University
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Lee Ga‐won
Dept. Of Electronic Engineering Chungnam National University
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Oh Jae
Dept. Of Electronic Engineering Chungnam National University
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Choi Kwang
Dept. Of Electronic Engineering Chungnam National University
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Kim Young
National Genome Information Center Korea Research Institute Of Bioscience And Biotechnology
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Lee Ga
Dept. Of Electronic Engineering Chungnam National University
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Park Jeong
Dept. Of Electronic Engineering Chungnam National University
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Kim Young
National Center for Nanoprocess and Equipments, Honam Technology Division, Korea Institute of Industrial Technology, Gwangju 500-480, Korea
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