Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer

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概要

• 論文の詳細を見る
• 2012-08-25

著者

• OH Jae

  National Nanofab Center

• CHO Byung

  Department of Electrical Engineering, KAIST

• Cho Byung

  Department Of Eecs Kaist

• Park Jong

  Department Mathematics Pusan National University

• LEE Seok-Hee

  Department of Electrical Engineering, KAIST

• LEE Ki-Hong

  Hynix Semiconductor Inc.

• PYI Seung

  Hynix Semiconductor Inc.

• PARK Jong

  Department of Electrical Engineering, KAIST

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