Synthesis of wafer scale graphene layer for future electronic devices(Session 2B : Graphene and III-Vs)
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概要
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The quality of graphene synthesized on metal thin film by chemical vapor deposition is improved by optimizing synthesis process conditions. It has been found that annealing temperature and CH_4 gas flow rate are critical factor to obtain the thin and uniform graphene layers on Ni substrate, hi addition, it is demonstrated that platinum is a good alternative material for the growth of mono layer graphene because of less agglomeration, lower carbon solubility, and similar thermal expansion coefficient to graphene. Growth of good quality monolayer graphene with excellent uniformity is achieved by CVD on Pt thin film.
- 2010-06-23
著者
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CHO Byung
Department of Electrical Engineering, KAIST
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MUN Jeong
Department of Electrical Engineering, KAIST
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Cho Byung
Department Of Eecs Kaist
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Cho Byung
Department Of Electrical Engineering Kaist
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Mun Jeong
Department Of Electrical Engineering Kaist
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