High-K Dielectrics for Charge Trap-type Flash Memory Application(Session2: Silicon Devices I)
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概要
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In this paper, lanthanide group oxides, AlLaO_x, HfLaO_x, Gd_2O_3 and GdAlO_3, used as blocking oxide in charge trap-type Flash memory devices have been studied. The ALD process for AlLaO_x and HfLaO_x with high deposition rate, good uniformity and self-limiting behavior were successfully developed. The charge trap memory with AlLaO_x and HfLaO_x as blocking layer demonstrates much faster operation speed but comparable (AlLaO_x) or worse (HfLaO_x) retention, compared to Al_2O_3 blocking layer control sample. Another group of high-k materials, Gd_2O_3-based dielectric, used as the blocking oxide demonstrates enhanced operation speed. Incorporation of Al into Gd_2O_3 improves the retention further, which is an attractive candidate for blocking layer in charge trap-type Flash memory devices.
- 2008-07-02
著者
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Cho Byung
Department Of Eecs Kaist
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He Wei
Department Of Ece National University Of Singapore
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Cho Byung
Department Of Electrical And Computer Engineering National University Of Singapore
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Pu Jing
Department of ECE, National University of Singapore
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Pu Jing
Department Of Ece National University Of Singapore
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He Wei
Department of ECE, National University of Singapore
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Cho Byung
Department of EECS,KAIST
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He Wei
Department of Cardiothoracic Surgery, Zhongda Hospital, Medical School, Southeast University
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