Hot-Carrier Lifetime Dependence on Channel Width and Silicon Recess Depth in N-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors with the Recessed Local Oxidation of Silicon Isolation Structure(Semiconductors)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-01-15
著者
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Cho B
National Univ. Singapore Sgp
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Cho Byung
Department Of Electrical And Computer Engineering National University Of Singapore
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CHIM Wai
Center for Integrated Circuit Failure Analysis and Reliability, Department of Electrical and Compute
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Yue Jeffrey
Center For Integrated Circuit Failure Analysis And Reliability Department Of Electrical And Computer
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CHO Byung
Center for Integrated Circuit Failure Analysis and Reliability, Department of Electrical and Compute
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Chim Wai
Center For Integrated Circuit Failure Analysis And Reliability Department Of Electrical And Computer
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Yue Jeffery
Center for Integrated Circuit Failure Analysis and Reliability, Department of Electrical and Computer Engineering, National University of Singapore
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