Random Telegraphic Signals and Low-Frequency Noise in Rapid-Thermal-Annealed Silicon-Silison Oxide Structures
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-01-15
著者
-
CHIM Wai
Center for Integrated Circuit Failure Analysis and Reliability, Department of Electrical and Compute
-
Chim Wai
Center For Integrated Circuit Failure Analysis And Reliability Faculty Of Engineering National Unive
-
LEONG Kok
Microelectronics Laboratory, Department of Electrical and Computer Enginering, National University o
-
CHOI Wee
Microelectronics Laboratory, Department of Electrical and Computer Enginering, National University o
-
Chim Wa
Centre for Integrated Circuit Failure Analysis and Reliability, Faculty of Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260
関連論文
- Latent Damage Generation in Thin Oxides of Metal-Oxide-Semiconductor Devices under High-Field Impulse Stress and Damage Characterization Using Low-Frequency Noise Measurement : Semiconductors
- Hot-Carrier Lifetime Dependence on Channel Width and Silicon Recess Depth in N-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors with the Recessed Local Oxidation of Silicon Isolation Structure(Semiconductors)
- Random Telegraphic Signals and Low-Frequency Noise in Rapid-Thermal-Annealed Silicon-Silison Oxide Structures