Latent Damage Generation in Thin Oxides of Metal-Oxide-Semiconductor Devices under High-Field Impulse Stress and Damage Characterization Using Low-Frequency Noise Measurement : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-12-15
著者
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Lim Peng
Center For Integrated Circuit Failure Analysis And Reliability Department Of Electrical And Computer
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CHIM Wai
Center for Integrated Circuit Failure Analysis and Reliability, Department of Electrical and Compute
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Chim Wai
Center For Integrated Circuit Failure Analysis And Reliability Department Of Electrical And Computer
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Chim Wai
Center For Integrated Circuit Failure Analysis And Reliability Department Of Electrical And Computer
関連論文
- Latent Damage Generation in Thin Oxides of Metal-Oxide-Semiconductor Devices under High-Field Impulse Stress and Damage Characterization Using Low-Frequency Noise Measurement : Semiconductors
- Hot-Carrier Lifetime Dependence on Channel Width and Silicon Recess Depth in N-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors with the Recessed Local Oxidation of Silicon Isolation Structure(Semiconductors)
- Random Telegraphic Signals and Low-Frequency Noise in Rapid-Thermal-Annealed Silicon-Silison Oxide Structures