Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3 Blocking Layer in Flash Memory Device
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概要
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The mechanism underlying improved data retention via high-temperature oxygen annealing of the Al2O3 blocking layer in a charge-trap type flash memory device is investigated in comparison with the case of high-temperature nitrogen annealing. The results show that significant improvement of the retention property can be achieved by oxygen annealing at 1100 °C, compared to nitrogen annealing. Experimental evidence indicated that the underlying mechanism does not arise from suppression of the trap-assisted tunneling current through the blocking oxide; instead it is caused by a reduction of the thermionic emission component of the charge loss factor. This is possibly due to changes of the conduction band offset of the crystallized Al2O3.
- 2011-04-25
著者
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OH Jae
National Nanofab Center
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Cho Byung
Department Of Eecs Kaist
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LIM Sung
National Nanofab Center
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JOO Moon
Hynix Semiconductor Inc.
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HONG Kwon
Hynix Semiconductor Inc.
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Park Youngmin
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Park Jong
Department Mathematics Pusan National University
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Lee Seok-Hee
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
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Oh Jae
National Nanofab Center, Daejeon 305-701, Korea
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Lim Sung
National Nanofab Center, Daejeon 305-701, Korea
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LEE Seok-Hee
Department of Electrical Engineering, KAIST
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Park Jong
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
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Joo Moon
Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Cho Byung
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
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Hong Kwon
Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Park Youngmin
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
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