Oh Jae | National Nanofab Center, Daejeon 305-701, Korea
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概要
関連著者
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OH Jae
National Nanofab Center
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Cho Byung
Department Of Eecs Kaist
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Park Jong
Department Mathematics Pusan National University
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Oh Jae
National Nanofab Center, Daejeon 305-701, Korea
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LEE Seok-Hee
Department of Electrical Engineering, KAIST
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LIM Sung
National Nanofab Center
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JOO Moon
Hynix Semiconductor Inc.
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HONG Kwon
Hynix Semiconductor Inc.
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Park Youngmin
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Lee Seok-Hee
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
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Lim Sung
National Nanofab Center, Daejeon 305-701, Korea
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LEE Ki-Hong
Hynix Semiconductor Inc.
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PYI Seung
Hynix Semiconductor Inc.
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Lee Ki-Hong
Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Park Jong
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
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Park Jong
Department of Electrical Engineering, KAIST, Daejeon 305-701, Korea
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Lee Seok-Hee
Department of Electrical Engineering, KAIST, Daejeon 305-701, Korea
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Pyi Seung
Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Joo Moon
Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Cho Byung
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
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Cho Byung
Department of Electrical Engineering, KAIST, Daejeon 305-701, Korea
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Hong Kwon
Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea
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Park Youngmin
Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
著作論文
- Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3 Blocking Layer in Flash Memory Device
- Improvement of Charge Retention in Flash Memory Devices by Very Light Doping of Lanthanum into an Aluminum-Oxide Blocking Layer