Park Youngmin | Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology

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概要

• 同名の論文著者
• Department Of Electrical Engineering Korea Advanced Institute Of Science And Technologyの論文著者

関連著者

• OH Jae

  National Nanofab Center

• Cho Byung

  Department Of Eecs Kaist

• LIM Sung

  National Nanofab Center

• JOO Moon

  Hynix Semiconductor Inc.

• HONG Kwon

  Hynix Semiconductor Inc.

• Park Youngmin

  Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology

• Park Jong

  Department Mathematics Pusan National University

• PARK Jong

  Department of Internal Medicine, Chonnam National University Hospital

• Cho Byung

  Department Of Electrical And Computer Engineering National University Of Singapore

• PARK Youngmin

  Department of Electrical Engineering, Korea Advanced Institute of Science and Technology

• SONG Myeong

  National Nanofab Center

• Cho Byung

  Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology

• Park Jong

  Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology

• Lee Seok-Hee

  Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea

• Oh Jae

  National Nanofab Center, Daejeon 305-701, Korea

• Lim Sung

  National Nanofab Center, Daejeon 305-701, Korea

• LEE Seok-Hee

  Department of Electrical Engineering, KAIST

• Park Jong

  Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea

• Joo Moon

  Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea

• Cho Byung

  Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea

• Hong Kwon

  Hynix Semiconductor Inc., Icheon, Gyeonggi 467-701, Korea

• Park Youngmin

  Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea

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著作論文

• Cubic-Structured HfLaO for the Blocking Layer of a Charge-Trap Type Flash Memory Device
• Mechanism of Date Retention Improvement by High Temperature Annealing of Al2O3 Blocking Layer in Flash Memory Device

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