Effect of Rapid Thermal Annealing on the Electrical Characteristics of ZnO Thin-Film Transistors
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概要
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Thin-film transistors (TFTs) with a bottom-gate configuration were fabricated with an RF magnetron sputtered undoped zinc oxide (ZnO) channel layer and plasma-enhanced chemical vapor deposition (PECVD) grown silicon nitride as a gate dielectric. Postfabrication rapid thermal annealing (RTA) and subsequent nitrous oxide (N2O) plasma treatment were employed to improve the performance of ZnO TFTs in terms of on-current and on/off current ratio. The RTA treatment increases the on-current of the TFT significantly, but it also increases its off-current. The off-current of $2\times 10^{-8}$ A and on/off current ratio of $3\times 10^{3}$ obtained after the RTA treatment were improved to $10^{-10}$ A and $10^{5}$, respectively, by the subsequent N2O plasma treatment. The better device performance can be attributed to the reduction of oxygen vacancies at the top region of the channel due to oxygen incorporation from the N2O plasma. X-ray photoelectron spectroscopy (XPS) analysis of the TFT samples showed that the RTA-treated ZnO surface has more oxygen vacancies than as-deposited samples, which results in the increased drain current. The XPS study also showed that the subsequent N2O plasma treatment reduces oxygen vacancies only at the surface of ZnO so that the better off-current and on/off current ratio can be obtained.
- 2008-04-25
著者
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Park Seong-ju
Department Of Materials Science And Engineering And Center For Optoelectronic Materials Research Kwa
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Hwang Dae-Kue
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Hwang Dae-Kue
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
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Remashan Kariyadan
Department of Information and Communication, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Jang Jae-Hyung
Department of Information and Communication, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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Jang Jae-Hyung
Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea
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Park Seong-Ju
Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea
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JANG Jae-Hyung
Department of Electronics Engineering, Chungnam National University
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