Enhancement-Mode Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors on Glass Substrates Using N2O Plasma Treatment

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概要

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• Thin-film transistors (TFTs) were fabricated on a glass substrate with a metal organic chemical vapor deposition (MOCVD)-grown undoped zinc oxide (ZnO) film as a channel layer and plasma-enhanced chemical vapor deposition (PECVD)-grown silicon nitride as a gate dielectric. The as-fabricated ZnO TFTs exhibited depletion-type device characteristics with a drain current of about 24 μA at zero gate voltage, a turn-on voltage ($V_{\text{on}}$) of $-24$ V, and a threshold voltage ($V_{\text{T}}$) of $-4$ V. The field-effect mobility, subthreshold slope, off-current, and on/off current ratio of the as-fabricated TFTs were 5 cm2 V-1 s-1, 4.70 V/decade, 0.6 nA, and $10^{6}$, respectively. The postfabrication N2O plasma treatment on the as-fabricated ZnO TFTs changed their device operation to enhancement-mode, and these N2O-treated ZnO TFTs exhibited a drain current of only 15 pA at zero gate voltage, a $V_{\text{on}}$ of $-1.5$ V, and a $V_{\text{T}}$ of 11 V. Compared with the as-fabricated ZnO TFTs, the off-current was about 3 orders of magnitude lower, the subthreshold slope was nearly 7 times lower, and the on/off current ratio was 2 orders of magnitude higher for the N2O-plasma-treated ZnO TFTs. X-ray phtotoelectron spectroscopy analysis showed that the N2O-plasma-treated ZnO films had fewer oxygen vacancies than the as-grown films. The enhancement-mode device behavior as well as the improved performance of the N2O-treated ZnO TFTs can be attributed to the reduced number of oxygen vacancies in the channel region.

• 2010-04-25

著者

• Remashan Kariyadan

  Department of Information and Communication, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea

• Jae-Hyung Jang

  Department of Information and Communications and Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

• Kariyadan Remashan

  Department of Information and Communications and Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

• Choi Yong-Seok

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

• Kang Se-Koo

  Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, Korea

• Jeong-Woon Bae

  Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, Korea

• Geun-Young Yeom

  Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, Korea

• Seong-Ju Park

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

• Se-Koo Kang

  Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, Korea

• Yong-Seok Choi

  Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

関連論文

• Improved Characteristics of Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors by Controlling VI/II Ratio of ZnO Film Growth and Using a Modified Thin-Film Transistor Layer Structure
• Efficiency Enhancement in Bulk Heterojunction Polymer Photovoltaic Cells Using ZrTiO4/Bi2O3 Metal-Oxide Nanocomposites
• Effect of Rapid Thermal Annealing on the Electrical Characteristics of ZnO Thin-Film Transistors
• Enhancement-Mode Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors on Glass Substrates Using N2O Plasma Treatment

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