Fabrication and Characterization of Capless In_<0.52>Al_<0.48>As/In_<0.53>Ga_<0.47>As HEMTs(Semiconductor Materials and Devices)
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概要
- 論文の詳細を見る
Capless high electron mobility transistors (HEMTs) were fabricated and their DC and RF performances were characterized. Capless HEMTs did not have highly doped InGaAs cap layer so that gate recess process was not required in the fabrication of capless HEMTs. The electrical performances of the capless HEMTs were compared with those of conventional HEMTs with highly doped InGaAs cap layer. A typical 0.2μm capless HEMT exhibited a maximum transconductance of 805mS/mm, a threshold voltage of -0.5V, and a unity current gain cut-off frequency (f_T) of 137GHz. Capless HEMTs exhibited improved device uniformity compared with conventional HEMTs fabricated by wet gate recess technology.
- 社団法人電子情報通信学会の論文
- 2006-08-01
著者
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Jang Jae-hyung
Micro And Nanotechnology Laboratory And Department Of Electrical And Computer Engineering University
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Adesida Ilesanmi
Micro And Nanotechnology Laboratory And Department Of Electrical And Computer Engineering University
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Adesida Ilesanmi
Micro And Nanotechnology Laboratory
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