GaN Growth Using GaN Buffer Layer

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概要

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• High-quality gallium nitride (GaN) film was obtained for the first time using a GaN buffer layer on a sapphire substrate. An optically flat and smooth surface was obtained over a two-inch sapphire substrate. Hall measurement was performed on GaN films grown with a GaN buffer layer as a function of the thickness of the GaN buffer layer. For the GaN film grown with a 200Å-GaN buffer layer, the carrier concentration and Hall mobility were 4×10^<16>/cm^3 and 600cm^2/V・s, respectively, at room temperature. The values became 8×10^<15>/cm^3 and 1500cm^2/V・s at 77 K, respectively. These values of Hall mobility are the highest ever reported for GaN films. The Hall measurement shows that the optimum thickness of the GaN buffer layer is around 200Å.

• 社団法人応用物理学会の論文
• 1991-10-01

著者

• Nakamura Shuji

  Nichia Chemical Industries Inc.

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