X-ray Absorption Studies on the Growth Process of Radio-Frequency-Magnetron-Sputtered Boron Nitride Films : Effects of Bias Voltage and Substrate Temperature

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Inoue Shozo

  Department Of Electronics Chiba Institute Of Technology

• Namazu Takahiro

  Department Of Mechanical And System Engineering University Of Hyogo

• Yoshiki Keisuke

  Department of Mechanical Science and Bioengineering, Graduate School of Engineering Science, Osaka University, Machikaneyama 1-3, Toyonaka, Osaka 560-8531, Japan

• Niibe Masahito

  Laboratory of Advanced Science &Technology for Industry, Himeji Institute of Technology

• Kotaka Takuya

  Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigoori, Hyogo 678-1205, Japan

• Hori Satoko

  Department of Mechanical & Systems Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan

• Fujii Kiyotoshi

  Shimizu Densetsu Kougyo Co., Ltd., Amagasaki, Hyogo 660-0822, Japan

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• X-ray Absorption Studies on the Growth Process of Radio-Frequency-Magnetron-Sputtered Boron Nitride Films: Effects of Bias Voltage and Substrate Temperature
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• X-ray Absorption Studies on the Growth Process of Radio-Frequency-Magnetron-Sputtered Boron Nitride Films : Effects of Bias Voltage and Substrate Temperature

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