Yoshiki Keisuke | Department of Mechanical Science and Bioengineering, Graduate School of Engineering Science, Osaka University, Machikaneyama 1-3, Toyonaka, Osaka 560-8531, Japan
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概要
- Yoshiki Keisukeの詳細を見る
- 同名の論文著者
- Department of Mechanical Science and Bioengineering, Graduate School of Engineering Science, Osaka University, Machikaneyama 1-3, Toyonaka, Osaka 560-8531, Japanの論文著者
関連著者
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Yoshiki Keisuke
Department of Mechanical Science and Bioengineering, Graduate School of Engineering Science, Osaka University, Machikaneyama 1-3, Toyonaka, Osaka 560-8531, Japan
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Inoue Shozo
Department Of Electronics Chiba Institute Of Technology
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Namazu Takahiro
Department Of Mechanical And System Engineering University Of Hyogo
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Niibe Masahito
Laboratory of Advanced Science &Technology for Industry, Himeji Institute of Technology
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Kotaka Takuya
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigoori, Hyogo 678-1205, Japan
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Hori Satoko
Department of Mechanical & Systems Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan
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Fujii Kiyotoshi
Shimizu Densetsu Kougyo Co., Ltd., Amagasaki, Hyogo 660-0822, Japan
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Araki Tsutomu
Department Of Applied Physics Faculty Of Engineering Osaka University
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Hashimoto Mamoru
Department Of Applied Chemistry Faculty Of Engineering Kyushu Institute Of Technology
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Hashimoto Mamoru
Department of Mechanical Science and Bioengineering, Graduate School of Engineering Science, Osaka University, Machikaneyama 1-3, Toyonaka, Osaka 560-8531, Japan
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Kotaka Takuya
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan
著作論文
- Second-Harmonic-Generation Microscopy Using Excitation Beam with Controlled Polarization Pattern to Determine Three-Dimensional Molecular Orientation
- X-ray Absorption Studies on the Growth Process of Radio-Frequency-Magnetron-Sputtered Boron Nitride Films: Effects of Bias Voltage and Substrate Temperature
- X-ray Absorption Studies on the Growth Process of Radio-Frequency-Magnetron-Sputtered Boron Nitride Films : Effects of Bias Voltage and Substrate Temperature