X-ray Absorption Studies on the Growth Process of Radio-Frequency-Magnetron-Sputtered Boron Nitride Films: Effects of Bias Voltage and Substrate Temperature

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概要

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• We have investigated the effects of bias voltage and substrate temperature on the growth process of RF-magnetron-sputtered BN films. When the negative bias voltage was higher than 80 V, films including the sp³-BN phase grew even if the substrate temperature was RT. When the substrate temperature and the negative bias voltage were 600 °C and {>}100 V, respectively, films containing more than 90% sp³-BN phase were grown. The growth process of films deposited at 150 and 600 °C under a constant bias voltage of -100 V was studied by Near edge X-ray absorption fine structure (NEXAFS) measurements. These films consisted of two layers: an sp²-BN phase underlayer and an sp³-BN phase top layer. The sp²-BN underlayer had a preferential orientation of the c-axis parallel to the film surface. The thickness of the sp²-BN underlayer decreased with increasing substrate temperature. High substrate temperatures assisted the nucleation and growth of the sp³-BN phase.

• 2013-04-25

著者

• Inoue Shozo

  Department Of Electronics Chiba Institute Of Technology

• Namazu Takahiro

  Department Of Mechanical And System Engineering University Of Hyogo

• Yoshiki Keisuke

  Department of Mechanical Science and Bioengineering, Graduate School of Engineering Science, Osaka University, Machikaneyama 1-3, Toyonaka, Osaka 560-8531, Japan

• Niibe Masahito

  Laboratory of Advanced Science &Technology for Industry, Himeji Institute of Technology

• Kotaka Takuya

  Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan

• Kotaka Takuya

  Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigoori, Hyogo 678-1205, Japan

• Hori Satoko

  Department of Mechanical & Systems Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan

• Fujii Kiyotoshi

  Shimizu Densetsu Kougyo Co., Ltd., Amagasaki, Hyogo 660-0822, Japan

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