Damage Characteristics of TiO<sub>2</sub> Thin Film Surfaces Etched by Capacitively Coupled Radio Frequency Helium Plasmas
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概要
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Damage characteristics of TiO<sub>2</sub> thin film surfaces etched by capacitively coupled RF He plasmas are found to be dependent on gas pressure and etch time. At a low gas pressure (10 mTorr), the morphology of TiO<sub>2</sub> surface etched for 5 min is smooth like the as-grown surface. When the etch time lengthens to 60 min, the surface morphology is smoother. However, the atomic O concentration at the surface is lower than that of the as-grown surface. On the other hand, at a high gas pressure (50--100 mTorr), the He plasma etch causes a rough surface morphology (surface defects) when the etch time lengthens to 60 min.
- 2011-08-25
著者
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Niibe Masahito
Laboratory of Advanced Science &Technology for Industry, Himeji Institute of Technology
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Inaoka Takeshi
Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
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Tominaga Kikuo
Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
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Takeichi Atsushi
Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
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Kawakami Retsuo
Institute of Socio-Techno Science Technology, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan
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