Inhibition of Contamination of Ru-Capped Multilayer Mirrors for Extreme Ultraviolet Lithography Projection Optics by Ethanol
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概要
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The inhibition of the contamination of Ru-capped Mo/Si multilayer mirrors was systematically investigated by introducing ethanol into a controlled vacuum that mainly consisted of water vapor. Water vapor was introduced at a pressure of up to $1.3\times 10^{-5}$ Pa, which is a typical pressure in extreme ultraviolet (EUV) lithography production tools. Additionally, ethanol was introduced at several partial pressures ranging from $1.0\times 10^{-7}$ to $3.8\times 10^{-5}$ Pa. At the lowest ethanol pressure, the same degree of reflectance degradation as in the water-only case was observed. However, reflectance degradation was suppressed at ethanol pressures higher than $2.0\times 10^{-6}$ Pa. As a result of surface analyses using X-ray photoelectron spectroscopy, we determined that the reflectance degradation was caused by oxidation. The inhibition of contamination may be caused by a mechanism of a self-limiting carbon layer from ethanol adsorption on a hydroxylated mirror surface. It was found that oxides at the mirror surface were deoxidized by introduced ethanol. Therefore, deoxidization of the Ru layer may be one of the mechanisms of the inhibition of contamination. The suppression of reflectance degradation was independent of the photon intensity and measured for up to 1200 J/mm2. This dose corresponds to about 3 months of operation for projection optics mirrors at the maximum power expected. Therefore, the introduction of ethanol was found to be a promising method for inhibiting the contamination of projection optics mirrors, which are irradiated by a wide range of EUV power.
- 2007-09-30
著者
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Fukuda Yasuaki
Extreme Ultraviolet Lithography System Development Association (euva)
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MURAKAMI Katsuhiko
Extreme Ultraviolet Lithography System Development Association (EUVA), Wave Front Measurement Lab.
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Kakutani Yukinobu
Laboratory Of Advanced Science And Technology For Industry University Of Hyogo
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Niibe Masahito
Laboratory of Advanced Science &Technology for Industry, Himeji Institute of Technology
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Niibe Masahito
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, 3-1-2 Kouto, Kamigoori, Ako, Hyogo 678-1205, Japan
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Gomei Yoshio
Canon Inc., 23-10, Kiyohara Kogyo-Danchi, Utsunomiya 321-3298, Japan
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Takase Hiromitsu
Extreme Ultraviolet Lithography System Development Association (EUVA), 11th Floor, Kawasaki East One Building, 11-1 Ekimae-honcho, Kawasaki-ku, Kawasaki 210-0007, Japan
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Terashima Shigeru
Extreme Ultraviolet Lithography System Development Association (EUVA), 11th Floor, Kawasaki East One Building, 11-1 Ekimae-honcho, Kawasaki-ku, Kawasaki 210-0007, Japan
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Matsunari Shuichi
Extreme Ultraviolet Lithography System Development Association (EUVA), 11th Floor, Kawasaki East One Building, 11-1 Ekimae-honcho, Kawasaki-ku, Kawasaki 210-0007, Japan
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Aoki Takashi
Extreme Ultraviolet Lithography System Development Association (EUVA), 11th Floor, Kawasaki East One Building, 11-1 Ekimae-honcho, Kawasaki-ku, Kawasaki 210-0007, Japan
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Kakutani Yukinobu
Laboratory of Advanced Science and Technology for Industry, University of Hyogo, 3-1-2 Kouto, Kamigoori, Ako, Hyogo 678-1205, Japan
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Fukuda Yasuaki
Extreme Ultraviolet Lithography System Development Association (EUVA), 11th Floor, Kawasaki East One Building, 11-1 Ekimae-honcho, Kawasaki-ku, Kawasaki 210-0007, Japan
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Murakami Katsuhiko
Extreme Ultraviolet Lithography System Development Association (EUVA), 11th Floor, Kawasaki East One Building, 11-1 Ekimae-honcho, Kawasaki-ku, Kawasaki 210-0007, Japan
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