Mechanical Properties of Polycrystalline Titanium Nitride Films Measured by XRD Tensile Testing

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概要

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• This paper describes measurement of mechanical properties of micron-thin polycrystalline titanium nitride (TiN) films. We developed a novel tensile test technique that can directly measure lateral elastic strain of a microscale single/poly-crystalline specimen by means of X-ray diffraction (XRD), which enables evaluation of not only Youngs modulus but also Poissons ratio of TiN films. TiN films having thicknesses of 0.5 μm to 1.6 μm are deposited onto the top and bottom surfaces of a microscale single crystal silicon (Si) specimen. The deposition is carried out by r.f. reactive magnetron sputtering under Ar partial pressure ranging from 0.7 Pa to 1.0 Pa. Average values of Youngs modulus and Poissons ratio for the Si monolayer specimen are found to be 169 GPa and 0.35, respectively, which are in close agreement with analytical values. TiN films deposited under an Ar partial pressure of 0.7 Pa have average Youngs modulus of 290 GPa and Poissons ratio of 0.36. These values gradually decrease with increasing Ar partial pressure, but are independent of TiN film thickness. Fracture strength of a TiN/Si/TiN composite specimen shows dependence on film thickness, regardless of Ar partial pressure.

• 社団法人 電気学会の論文

著者

• Inoue Shozo

  Department Of Electronics Chiba Institute Of Technology

• NAMAZU Takahiro

  Department of Mechanical and System Engineering, University of Hyogo

• Takemoto Hideki

  Department of Mechanical and System Engineering, University of Hyogo

• Koterazawa Keiji

  Department of Mechanical and System Engineering, University of Hyogo

• Namazu Takahiro

  Department Of Mechanical And System Engineering University Of Hyogo

• INOUE Shozo

  Department of Mechanical and System Engineering, University of Hyogo

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• Mechanical Properties of Polycrystalline Titanium Nitride Films Measured by XRD Tensile Testing
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• X-ray Absorption Studies on the Growth Process of Radio-Frequency-Magnetron-Sputtered Boron Nitride Films: Effects of Bias Voltage and Substrate Temperature
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