Key Issue for the Fabrication of High-Efficiency Microcrystalline Silicon Thin-Film Solar Cells at Low Temperatures
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概要
- 論文の詳細を見る
Hydrogenated microcrystalline silicon (μc-Si:H) p-i-n solar cells have been prepared using the plasma-enhanced chemical vapor deposition (PECVD) method at process temperatures lower than 150℃. The low-temperature deposition of μc-Si:H was found to be effective in suppressing the formation of oxygen-related donors that cause a reduction of the open circuit voltage (V_<oc>). We demonstrate the increase in V_<oc> by lowering the deposition temperature to less than 150℃ without deteriorating other device parameters such as short circuit current (J_<sc>) and fill factor (FF). A high efficiency of 8.9% was obtained on a textured SnO_2 substrate (Asahi-U) substrate. Further improvement in the efficiency to 9.4% (V_<oc> = 0.526 V J_<sc> = 25.3 mA/cm^2, FF = 0.7 10) was achieved by optmiizing the texture of Ga-doped ZnO substrates. An attempt to increase the deposition rate is also demonstrated using 60 MHz plasma and a relatively high efficiency of 8.4% was obtained at a deposition rate of l2 Å/s.
- 社団法人応用物理学会の論文
- 2002-10-15
著者
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Matsuda Akihisa
National Institute Of Advanced Industrial Science And Technology
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Kondo Michio
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Kondo Michio
National Institute Of Advanced Industrial Science And Technology (aist
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NASUNO Yoshiyuki
National Institute of Advanced Industrial Science and Technology (AIST)
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