25pTG-6 Bright Edge-Emission from Ambipolar Light-Emitting Transistor of BP3T Single Crystal
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 2008-02-29
著者
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Bisri Satria
Imr-tohoku Univ.
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Yamao Takeshi
Kyoto Inst. Tech.
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Iwasa Yoshihiro
Imr-tohoku Univ.:crest-jst
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Iwasa Yoshihiro
Jst‐crest Saitama Jpn
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Iwasa Yoshihiro
Institute For Materials Research Tohoku University:crest Japan Science And Technology Agency
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Hotta Shu
Kyoto Inst. Tech.
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Takenobu Taishi
IMR-Tohoku Univ.
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Yomogida Yohei
IMR-Tohoku Univ.
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Yamao Takeshi
CREST-JST
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Hotta Shu
CREST-JST
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Takenobu Taishi
Imr-tohoku Univ.:presto-jst
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Takenobu Taishi
Institute For Materials Research Tohoku University
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Takenobu Taishi
Institute For Materials Research Tohoku University:crest Japan Science And Technology Agency
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Takano Takumi
Institute For Materials Research Tohoku University
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Takenobu Taishi
Waseda Univ.
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Iwasa Yoshihiro
Crest Japan Science And Technology Agency (jst)
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- 22aTB-4 Unique Optoelectronic Properties of Organic Single-Crystal Ambipolar Light-Emitting Transistors
- 25pTG-6 Bright Edge-Emission from Ambipolar Light-Emitting Transistor of BP3T Single Crystal
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