Ink-Jet Printing of a Single-Walled Carbon Nanotube Thin Film Transistor
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概要
- 論文の詳細を見る
Single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) were fabricated using ink-jet printing. We printed both thick source–drain electrodes and thin active semiconducting films using N,N-dimethylformamide (DMF)-based SWCNT dispersion. Despite the presence of metallic SWCNTs, the device exhibited field-effect behavior, with an effective mobility of 2.99 cm2 V-1 s-1 and an on/off current ratio of up to 75. The method used in this study is promising for the fabrication of large-scale high-performance SWCNT-TFTs.
- 2009-06-25
著者
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Asano Takeshi
Brother Industries Ltd.
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Iwasa Yoshihiro
Institute For Material Research Tohoku University
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Yanagi Kazuhiro
Nanotechnology Research Institute (NRI)
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Miyata Yasumitsu
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology (
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OKIMOTO Haruya
Institute for Materials Research, Tohoku University
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Takenobu Taishi
Institute For Materials Research Tohoku University
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Yanagi Kazuhiro
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8562, Japan
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Kataura Hiromichi
Nanotechnology Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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Kataura Hiromichi
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8562, Japan
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Asano Takeshi
Brother Industries, Ltd., Nagoya 467-8561, Japan
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TAKENOBU Taishi
Institute for Material Research, Tohoku University
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Miyata Yasumitsu
Nanotechnology Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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Miyata Yasumitsu
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8562, Japan
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Okimoto Haruya
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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