Optical Observation of Carrier Accumulation in Single-Walled Carbon Nanotube Transistors

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概要

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• Electric-field-induced spectral changes in single-walled carbon nanotubes were studied using a thin-film transistor configuration. As a function of electric field, the optical spectra displayed continuous intensity modulations. This is the direct evidence of carrier accumulation, and the amount of accumulated carriers was quantitatively consistent with the carrier density in the nanoscale wire-form field-effect transistor model.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2006-11-25

著者

• Iwasa Yoshihiro

  Institute For Material Research Tohoku University

• Shiraishi Masashi

  Department Of Marine Bioscience Faculty Of Biotechnology Fukui Prefectural University

• Murayama Yuji

  Institute For Materials Research Tohoku University

• TAKENOBU Taishi

  Institute for Material Research, Tohoku University

• Murayama Yuji

  Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

• Shiraishi Masashi

  Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

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