Properties of Surface-Modification Layer Generated by Atomic Hydrogen Annealing on Poly(ethylene naphthalate) Substrate

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概要

• 論文の詳細を見る

• The surface of a poly(ethylene naphthalate) (PEN) substrate was modified by atomic hydrogen annealing (AHA). In this method, a PEN substrate was exposed to atomic hydrogen generated by cracking hydrogen molecules on heated tungsten wire. The properties of the surface-modification layer by AHA were evaluated by spectroscopic ellipsometry. It is found that the thickness of the modified layer was 5 nm and that the modification layer has a low refractive index compared with the PEN substrate. The modification layer relates to the reduction reaction of the PEN substrate by AHA.

• 2008-01-25

著者

• HEYA Akira

  University of Hyogo

• MATSUO Naoto

  University of Hyogo

• Matsuo Naoto

  University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2280, Japan

関連論文

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• Behavior of Hydrogen in Excimer Laser Annealing of Hydrogen-Modulation-Doped Amorphous Silicon Layer
• Properties of Surface-Modification Layer Generated by Atomic Hydrogen Annealing on Poly(ethylene naphthalate) Substrate
• Hydrogen Modulation-Doped Structures to Improve Crystalline Fraction of Polycrystalline Silicon Films Prepared by Excimer Laser Annealing at Low Energy Densities
• Surface Modification of Poly(ethylene naphthalate) Substrate and Its Effect on SiNx Film Deposition by Atomic Hydrogen Annealing
• Surface Treatment of Plastic Substrates using Atomic Hydrogen Generated on Heated Tungsten Wire at Low Temperatures

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