Behavior of Hydrogen in Excimer Laser Annealing of Hydrogen-Modulation-Doped Amorphous Silicon Layer

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概要

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• A novel crystallization method for a low-temperature process is proposed, called “excimer laser annealing (ELA) of amorphous silicon (a-Si) with a hydrogen (H) modulation-doped layer” (ELHMD). The effects of H on low-energy crystallization by conventional ELA and ELHMD were investigated. The properties of polycrystalline silicon (poly-Si) film were changed by adjusting the H concentration and H distribution in the a-Si film for low-laser-energy irradiation. The recombination energy of H from the SiH2 bond enhances crystal nucleation during Si melting. Film exfoliation caused by H2 bursts can be suppressed and high-quality crystal grains are obtained by ELHMD.

• 2008-03-25

著者

• HEYA Akira

  University of Hyogo

• MATSUO Naoto

  University of Hyogo

• KAWAMOTO Naoya

  Yamaguchi University

• SERIKAWA Tadashi

  Osaka University

• Kawamoto Naoya

  Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan

関連論文

• Effect of Hydrogen on Secondary Grain Growth of Polycrystalline Silicon Films by Excimer Laser Annealing in Low-Temperature Process
• Excimer Laser Annealing of Hydrogen Modulation Doped a-Si Film
• Behavior of Hydrogen in Excimer Laser Annealing of Hydrogen-Modulation-Doped Amorphous Silicon Layer
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• Surface Modification of Poly(ethylene naphthalate) Substrate and Its Effect on SiNx Film Deposition by Atomic Hydrogen Annealing
• Surface Treatment of Plastic Substrates using Atomic Hydrogen Generated on Heated Tungsten Wire at Low Temperatures
• Reliability of Low Temperature Polycrystalline Silicon Thin-Film Transistors with Ultrathin Gate Oxide

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