Effects of Electron-Cyclotron-Resonance Oxygen Plasma Irradiation on Properties of Insulator/Ge-Semiconductor Interfaces Prior to Germanium Nitride Formation

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概要

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• Electron-cyclotron-resonance (ECR) oxygen (O2) plasma was irradiated onto the surface of germanium (Ge) substrates prior to germanium nitride (GeNx) formation. Germanium metal–insulator–semiconductor (Ge-MIS) structures with a 5-nm-thick silicon nitride/2-nm-thick GeNx gate insulator stack fabricated by ECR plasma nitridation and sputtering deposition without substrate heating were electrically and physically characterized. Although ECR O2 plasma irradiation onto the surface of Ge substrates caused no significant difference in the chemical state of GeNx/Ge interfaces in X-ray photoemission spectroscopic measurement, irradiation for an appropriate period improved the state of GeNx/Ge interfaces and the electrical properties of Ge-MIS.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-09-25

著者

• Toyota Hiroshi

  Department of Applied Physics and Chemistry, Faculty of Engineering, Hiroshima University

• Ono Toshiro

  Department Of Immunology Okayama University Graduate School Of Medicine And Dentistry

• Sato Tetsuya

  Clean Energy Research Center, University of Yamanashi, 4 Takeda, Kofu 400-8511, Japan

• Ono Toshiro

  Department of Intelligent Machines and System Engineering, Hirosaki University, Hirosaki, Aomori 036-8561, Japan

• Otani Yohei

  Department of Electronic System Engineering, Tokyo University of Science, Suwa, Chino, Nagano 391-0292, Japan

• Otani Yohei

  Department of Electronic System Engineering, Faculty of System Engineering, Tokyo University of Science, Suwa, 5000-1 Toyohira, Chino, Nagano 391-0292, Japan

• Fukuda Yukio

  Department of Electronic System Engineering, Faculty of System Engineering, Tokyo University of Science, Suwa, 5000-1 Toyohira, Chino, Nagano 391-0292, Japan

• Nakagawa Kiyokazu

  Center for Crystal Science and Technology, Faculty of Engineering, University of Yamanashi, Kofu 400-8511, Japan

• Sato Tetsuya

  Clean Energy Research Center, University of Yamanashi, Kofu 400-8511, Japan

• Toyota Hiroshi

  Department of Applied Physics and Chemistry, Faculty of Engineering, Hiroshima University,

• Ono Toshiro

  Department of Chemistry, Faculty of Science, Okayama University

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