Sato Tetsuya | Clean Energy Research Center, University of Yamanashi, 4 Takeda, Kofu 400-8511, Japan
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概要
- Sato Tetsuyaの詳細を見る
- 同名の論文著者
- Clean Energy Research Center, University of Yamanashi, 4 Takeda, Kofu 400-8511, Japanの論文著者
関連著者
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Sato Tetsuya
Clean Energy Research Center, University of Yamanashi, 4 Takeda, Kofu 400-8511, Japan
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SOGOSHI Norihito
Saitama University
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Toyota Hiroshi
Department of Applied Physics and Chemistry, Faculty of Engineering, Hiroshima University
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Hiraoka Kenzo
Clean Energy Res. Center The Univ. Of Yamanashi
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Ono Toshiro
Department Of Immunology Okayama University Graduate School Of Medicine And Dentistry
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Takashima Hideaki
Clean Energy Research Center, University of Yamanashi, 4 Takeda, Kofu 400-8511, Japan
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Sato Shoji
Clean Energy Research Center, University of Yamanashi, 4 Takeda, Kofu 400-8511, Japan
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Ono Toshiro
Department of Intelligent Machines and System Engineering, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Otani Yohei
Department of Electronic System Engineering, Tokyo University of Science, Suwa, Chino, Nagano 391-0292, Japan
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Otani Yohei
Department of Electronic System Engineering, Faculty of System Engineering, Tokyo University of Science, Suwa, 5000-1 Toyohira, Chino, Nagano 391-0292, Japan
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Fukuda Yukio
Department of Electronic System Engineering, Faculty of System Engineering, Tokyo University of Science, Suwa, 5000-1 Toyohira, Chino, Nagano 391-0292, Japan
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Nakagawa Kiyokazu
Center for Crystal Science and Technology, Faculty of Engineering, University of Yamanashi, Kofu 400-8511, Japan
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Sato Tetsuya
Clean Energy Research Center, University of Yamanashi, Kofu 400-8511, Japan
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Toyota Hiroshi
Department of Applied Physics and Chemistry, Faculty of Engineering, Hiroshima University,
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Ono Toshiro
Department of Chemistry, Faculty of Science, Okayama University
著作論文
- Synthesis of Amorphous Germane by Tunneling Reactions of Hydrogen Atoms with van der Waals GeH4 Films at Cryogenic Temperatures
- Effects of Electron-Cyclotron-Resonance Oxygen Plasma Irradiation on Properties of Insulator/Ge-Semiconductor Interfaces Prior to Germanium Nitride Formation