Excitation Density and Temperature Dependent Photoluminescence of InGaAs Self-Assembled Quantum Dots
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-01-30
著者
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Nee T‐e
Chang Gung Univ. Tao‐yuan Twn
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CHYI Jen-Inn
Department of Electrical Engineering, National Central University
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Chang Wen-hao
Department Of Physics National Central University
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Chyi J‐i
National Central Univ. Chung‐li Twn
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Chyi Jen-inn
Department Of Electrical Engineering National Central University
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NEE Tzer-En
Institute of Optical Science, National Central University
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YEH Nien-Tze
Department of Electrical Engineering, National Central University
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Yeh Nien-tze
Department Of Electrical Engineering National Central University
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HSU Tzu-Min
Department of Physics, National Central University
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TSAI Kuei-Fen
Department of Physics, National Central University
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Hsu Tzu-min
Department Of Physics National Central University
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Tsai Kuei-fen
Department Of Physics National Central University
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Nee Tzer-en
Institute Of Optical Science National Central University
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Chang Wen-Hao
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Republic of China
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Nee Tzer-En
Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Kweisan, Taoyuan 333, Taiwan, R.O.C.
関連論文
- Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector
- Reduced Mesa-Sidewall Leakage Current in InGaAs/InP MSM Photodetector by BCB Sidewall Process
- The low-k BCB passivation layer on the GaN HEMTs
- Laser-Induced Activation of p-Type GaN with the Second Harmonics of a Nd:YAG Laser
- Room-Temperature Operation of In_Ga_As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
- Photoluminescence Characteristics of Self-Assembled In_Ga_As Quantum Dots on Vicinal GaAs Substrates
- InAs/In(Ga,Al)AsSb Quantum Dot Heterostructures for Photonic Devices
- Excitation Density and Temperature Dependent Photoluminescence of InGaAs Self-Assembled Quantum Dots
- Characteristics of In_Ga_As/In_Al_As Heterostructures Grown on GaAs Using InAlAs Buffers
- Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector
- Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching
- Effect of Excitonic Interactions on Abnormal Luminescence Behaviour of InGaN/GaN Light-Emitting Diodes with Electron Tunneling Layer
- Laser-Induced Activation of p-Type GaN with the Second Harmonics of a Nd:YAG Laser
- Optical Properties of Uncapped InN Nanodots Grown at Various Temperatures
- Surface Passivation of GaSb(100) Using Molecular Beam Epitaxy of Y
- Photoluminescence Characteristics of Self-Assembled In0.5Ga0.5As Quantum Dots on Vicinal GaAs Substrates