Equivalent Saturated MOSFET Circuit with Wide Input Range(<Special Section>Analog Circuit Techniques and Related Topics)
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概要
- 論文の詳細を見る
An equivalent MOSFET circuit with a wide input range is proposed. The proposed circuit is suitable for a realization of a wide input range under a low power supply voltage. The circuit consists of a MOSFET array and level shift circuits. The sum of drain currents of the MOSFET array is used as an equivalent drain current. The equivalent drain current is represented by K(V_<GS>-V_T)^2 even when its drain-to-source voltage is quite small and some MOSFETs in the array are in the non-saturation region or the cut-off region. The input range of the proposed circuit realized by k-MOSFET array is k times as wide as that of a single MOSFET. It is confirmed through HSPICE simulations that the proposed circuit is effective in applications with a wide dynamic range.
- 社団法人電子情報通信学会の論文
- 2005-02-01
著者
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藤井 信男
九州大学システム情報科学研究院電気電子システム工学部門
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SATO Takahide
Graduate School of Science and Technology, Chiba University
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Takagi S
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Sato Takuro
Niigata Institute Of Technology
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Sato Takahide
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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TAKAGI Shigetaka
Graduate School of Science and Engineering, Tokyo Institute of Technology
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FUJII Nobuo
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Fujii Nobuo
Tokyo Inst. Of Technol. Tokyo Jpn
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Takagi Shigetaka
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Sato T
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Fujii Nobuo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Takagi Shigetaka
Tokyo Inst. Of Technol. Tokyo Jpn
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