Dependence of Carrier Lifetime in InAlAs/InGaAs HEMTs on Gate-to-Source Voltage
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Sato Takuro
Department Of Information And Electronics Engineering Niigata Institute Of Technology
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Iida Tsutomu
Department Of Materials Science And Technology Faculty Of Industrial Science And Technology Tokyo Un
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Taguchi Hirohisa
Department Of Materials Science And Technology Faculty Of Industrial Science And Technology Tokyo Un
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Taguchi Hirohisa
Department Of Internal Medicine 5 Tokyo Medical University
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Takanashi Yoshifumi
Department Of Materials Science And Technology Faculty Of Industrial Science And Technology Tokyo Un
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OURA Masashi
Department of Materials Science and Technology, Faculty of Industrial Science and Technology Tokyo U
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Oura Masashi
Department Of Materials Science And Technology Faculty Of Industrial Science And Technology Tokyo Un
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Sato Takuro
Department Of Materials Science And Technology Faculty Of Industrial Science And Technology Tokyo Un
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Iida Tsutomu
Department of Material Science and Technology, Faculty of Industrial Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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