Ultrafast Optical Response of InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors

概要

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High-electron-mobility transistors with a pseudomorphically strained InAs channel (InAs-PHEMTs) have excellent electron transport properties and a high electron density, which are due to their large conduction band discontinuity. In this work, we show the dependence of optical response on drain-to-source voltage ($V_{\text{DS}}$) for InAs-PHEMTs and clarify the physical mechanism for the response time. The experimental results can be explained successfully using two different lifetimes, one dominated by the time required for a hole to transit from the channel to the source region under the channel field and the other dominated by Auger recombination. To numerically understand the optical response, we estimate minority carrier lifetime using the Auger recombination theory. The theoretical result agrees well with the experimental result.
2010-04-25