Origin of Frequency Dependence in Drain Conductance of InAlAs/InGaAs HEMTs
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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NAKAMURA Yuki
Department of Fifth Surgery, Hachioji Medical Center, Tokyo Medical University
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Nakamura Yuki
Department Of Materials Science And Technology Faculty Of Industrial Science And Technology Tokyo Un
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Nakamura Yuki
Department Of Analytical Chemistry Faculty Of Pharmaceutical Sciences Teikyo University
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Hayakawa Maki
Department Of Materials Science And Technology Faculty Of Industrial Science And Technology Tokyo Un
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TAGUCHI Hirohisa
Department of Internal Medicine 5, Tokyo Medical University
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Iida Tsutomu
Department Of Materials Science And Technology Faculty Of Industrial Science And Technology Tokyo Un
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TAKANASHI Yoshifumi
Department of Materials Science and Technology, Faculty of Industrial Science and Technology Tokyo U
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Taguchi Hirohisa
Department Of Materials Science And Technology Faculty Of Industrial Science And Technology Tokyo Un
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Taguchi Hirohisa
Department Of Internal Medicine 5 Tokyo Medical University
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Takanashi Yoshifumi
Department Of Materials Science And Technology Faculty Of Industrial Science And Technology Tokyo Un
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Hayakawa Maki
Department Of Materials Science And Technology Faculty Of Industrial Science And Technology Tokyo Un
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Iida Tsutomu
Department of Material Science and Technology, Faculty of Industrial Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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