Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))

スポンサーリンク

概要

• 論文の詳細を見る

• In this paper, the P-channel Power MOSFET with a thin gate-oxide (200Å) threshold voltage (Vth) failure mechanism has been discussed. The Vth failure was observed by a heavy source implant for a P-type surface channel enhanced mode Power MOSFET. The heavy boron implant induces a penetration through P+ doped poly-silicon Power MOSFET has also been discussed. In general, the boron penetration exponentially increases with a decreased oxide thickness. The SEM and simulation data all show the well junction profile was re-distributed by the boron penetration. The measured data shows the boron penetration can be the prime contributor to PMOS Vth variation.

• 社団法人電子情報通信学会の論文
• 2004-06-24

著者

• Cheng Ching

  R&d Dept. Chino-excel Technology Corp.

• SU Shih-Tzung

  R&D Dept., Chino-Excel Technology Crop.

• CHENG Ching-Ling

  R&D Dept., Chino-Excel Technology Crop.

• SU Shin-Tzung

  R&D Dept., Chino-Excel Technology Corp.

• TU Kou-Way

  R&D Dept., Chino-Excel Technology Corp.

• Chien Feng-Tso

  R&D Dept. Chino-Excel Technology Corp.

• Tu Kou

  R&d Dept. Chino-excel Technology Corp.

• Chien Feng‐tso

  Dep. Of Electronic Engineering Feng Chia University

• Su Shih

  R&d Dept. Chino-excel Technology Corp.

• Chien Feng-tso

  The R&d Dept. Chino-excel Technology Corp.:the Department Of Electrical Engineering Feng Chia Un

• Fang Chin-mu

  Department Of Electronic Engineering Feng-chia University

関連論文

• A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Compound Semiconductor and Power Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
• High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III,AWAD2006)
• High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III)
• High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs
• High Performance Power MOSFETs by Wing-Cell Structure Design(Si Devices and Processes,Fundamental and Application of Advanced Semiconductor Devices)
• High Performance Power MOSFETs by Wing-cell Structure Design (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• High Performance Power MOSFETs by Wing-cell Structure Design (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Device Linearity and Gate Voltage Swing Improvement by Al_Ga_As/In_Ga_As Double Doped-Channel Design (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
• High Ruggedness Power MOSFET Design by a Self-Align p^+ Process(Power Devices, Fundamental and Application of Advanced Semiconductor Devices)
• A Novel High Ruggedness Power MOSFET With a Planar Oxide Deep P+ Implant Structure
• InGaP/InGaAs DCFETs with Drain and Source Recess Process
• High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application
• A Novel Power MOSFET Structure with Split P-well and Split Poly Design
• A Novel Power MOSFET Structure with Split P-well and Split Poly Design
• The Analysis of the Floating Field Limiting Ring and Field Plate(Session6: Power Devices)
• Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET(Session6: Power Devices)
• The Analysis of the Floating Field Limiting Ring and Field Plate(Session6: Power Devices)
• Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET(Session6: Power Devices)
• Low gate leakage current HEMTs by a new airbridge gate and a liquid oxidization surface (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Low gate leakage current HEMTs by a new airbridge gate and a liquid oxidization surface (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• A Noble Capacitive-Peaking Transimpedance Amplifier with High Linearity Gain Active Feedback Design
• A Novel HBT with Composite Collector for Power Amplifier Application
• The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006)
• The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006)
• High performance bottom-gated poly-Si thin film transistors employing novel extended metal-pad (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• High performance bottom-gated poly-Si thin film transistors employing novel extended metal-pad (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Low switching loss power MOSFET with dual gate structure (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Low switching loss power MOSFET with dual gate structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• High Linearity and High Power Device Fabricated by Al_Ga_As/In_Ga_As Double Doped-Channel Heterostructure
• A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Session 6B Power Devices,AWAD2006)
• A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Session 6B Power Devices,AWAD2006)

もっと見る 閉じる

スポンサーリンク