A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Session 6B Power Devices,AWAD2006)
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概要
- 論文の詳細を見る
Vertical Power MOSFETs are widely designed by deep well structures for breakdown requirement. In this study, we proposed, fabricated, and analyzed a "shallow dual well" structure Power MOSFET, which utilize an n-well to cover the conventional p-well. The cell density can be increased 351%. The increased cell density leads to improved gate charge and on resistance performances about 66.5% and 15.8% without sacrificing the device breakdown owing to a shallow junction design. In addition, with the dual well structure design, the breakdown point will occur at the center of the well. Therefore, the capability of avalanche energy can be improved about 1.9 times than the tradition well structure.
- 社団法人電子情報通信学会の論文
- 2006-06-26
著者
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LIAO Chien-Nan
Department of Electronic Engineering, Feng Chia University
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CHENG Ching-Ling
R&D Dept., Chino-Excel Technology Crop.
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Chien Feng-tso
Department Of Electronic Engineering Feng Chia University
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Liao Chien-nan
Department Of Electrical Engineering National Central University
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Liao Chien-nan
Department Of Electronic Engineering Feng Chia University
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Cheng Ching-ling
R&d Dept Chino-excel Technology Corp.
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Tsai Yei-Long
R&D DEPT, Chino-Excel Technology Corp.
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Tsai Yei-long
R&d Dept Chino-excel Technology Corp.
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