High performance bottom-gated poly-Si thin film transistors employing novel extended metal-pad (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
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概要
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Thin Film Transistor with poly-silicon channel improves kink effect by reducing drain electrical field has been investigated. In this paper, we propose a novel FID poly-silicon Thin Film Transistor with field plate to improve kink effect. By employing field plate overlapped channel, the electric field crowding near drain could be mitigated due to the field plate. We also explored different length of field plate and thickness of passivation oxide by ISE TCAD simulation tool. As the results, it reduces electric field effectively to improve kink effect without sacrificing characteristics too much.
- 社団法人電子情報通信学会の論文
- 2007-06-18
著者
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Chan Ming-hong
Department Of Electronic Engineering Feng-chia University
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Chien Feng‐tso
Dep. Of Electronic Engineering Feng Chia University
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Chien Feng-tso
Department Of Electronic Engineering Feng Chia University
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Chien Feng-tso
The R&d Dept. Chino-excel Technology Corp.:the Department Of Electrical Engineering Feng Chia Un
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Fang Chin-mu
Department Of Electronic Engineering Feng-chia University
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Fang Chin-mu
Dept. Of Electronic Engineering Feng-chia University
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