Fang Chin-mu | Dept. Of Electronic Engineering Feng-chia University

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著作論文

A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Compound Semiconductor and Power Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III,AWAD2006)
High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III)
High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs
High Performance Power MOSFETs by Wing-Cell Structure Design(Si Devices and Processes,Fundamental and Application of Advanced Semiconductor Devices)
High Performance Power MOSFETs by Wing-cell Structure Design (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
High Performance Power MOSFETs by Wing-cell Structure Design (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
High Ruggedness Power MOSFET Design by a Self-Align p^+ Process(Power Devices, Fundamental and Application of Advanced Semiconductor Devices)
A Novel High Ruggedness Power MOSFET With a Planar Oxide Deep P+ Implant Structure
InGaP/InGaAs DCFETs with Drain and Source Recess Process
High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
The Analysis of the Floating Field Limiting Ring and Field Plate(Session6: Power Devices)
Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET(Session6: Power Devices)
The Analysis of the Floating Field Limiting Ring and Field Plate(Session6: Power Devices)
Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET(Session6: Power Devices)
Low gate leakage current HEMTs by a new airbridge gate and a liquid oxidization surface (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
Low gate leakage current HEMTs by a new airbridge gate and a liquid oxidization surface (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006)
The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006)
High performance bottom-gated poly-Si thin film transistors employing novel extended metal-pad (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
High performance bottom-gated poly-Si thin film transistors employing novel extended metal-pad (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
Low switching loss power MOSFET with dual gate structure (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
Low switching loss power MOSFET with dual gate structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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