High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs
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概要
- 論文の詳細を見る
- 2006-06-26
著者
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Chiu Hsien
Dept. Of Electronic Engineering Chang Gung University
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Chan Chien-liang
Dep. Of Electronic Engineering Minghsin University Of Science And Technology University
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Liao Chien
Dep. Of Electrical Engineering National Central University
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LIAO Chien-Nan
Dept. of Electrical Engineering, National Central University
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CHIEN Feng-Tso
Dept. of Electronic Engineering, Feng Chia University
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CHIU Hsien-Chin
Dept. of Electronic Engineering, Chang Gung University
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Chan Chien-Liang
Dept. of Electronic Engineering, Feng Chia University
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Yin Jin-Mu
Dept. of Electronic Engineering, Feng Chia University
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Chien Feng
Dept. of Electronics Engineering, National Chiao Tung University
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Chiu H‐c
National Central Univ. Jungli Twn
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Yin Jin-mu
Dept. Of Electronic Engineering Feng Chia University
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Chien Feng‐tso
Dep. Of Electronic Engineering Feng Chia University
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Chien Feng-tso
The R&d Dept. Chino-excel Technology Corp.:the Department Of Electrical Engineering Feng Chia Un
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Liao Chien-nan
Dept. Of Electrical Engineering National Central University
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Liao Chien-nan
Department Of Electrical Engineering National Central University
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Fang Chin-mu
Department Of Electronic Engineering Feng-chia University
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Fang Chin-mu
Dept. Of Electronic Engineering Feng-chia University
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Chen Chii-wen
Dep. Of Electronic Engineering Minghsin University Of Science And Technology University
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Chan Chien-liang
Dept. Of Electronic Engineering Feng-chia University
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Chiu Hsien-chin
The Department Of Electrical Engineering National Central University
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Chien Feng
Dept. Of Electronic Engineering Feng-chia University
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