LIAO Chien-Nan | Dept. of Electrical Engineering, National Central University

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概要

• Liao Chien-Nanの詳細を見る
• 同名の論文著者
• Dept. of Electrical Engineering, National Central Universityの論文著者

関連著者

• LIAO Chien-Nan

  Dept. of Electrical Engineering, National Central University

• Liao Chien-nan

  Dept. Of Electrical Engineering National Central University

• Liao Chien-nan

  Department Of Electrical Engineering National Central University

• Liao Chien

  Dep. Of Electrical Engineering National Central University

• CHIEN Feng-Tso

  Dept. of Electronic Engineering, Feng Chia University

• Chien Feng‐tso

  Dep. Of Electronic Engineering Feng Chia University

• Chien Feng-tso

  The R&d Dept. Chino-excel Technology Corp.:the Department Of Electrical Engineering Feng Chia Un

• Fang Chin-mu

  Department Of Electronic Engineering Feng-chia University

• Fang Chin-mu

  Dept. Of Electronic Engineering Feng-chia University

• Chan Chien-liang

  Dep. Of Electronic Engineering Minghsin University Of Science And Technology University

• Chan Chien-Liang

  Dept. of Electronic Engineering, Feng Chia University

• Chen Chii-wen

  Dep. Of Electronic Engineering Minghsin University Of Science And Technology University

• Chan Chien-liang

  Dept. Of Electronic Engineering Feng-chia University

• Chiu Hsien

  Dept. Of Electronic Engineering Chang Gung University

• CHIU Hsien-Chin

  Dept. of Electronic Engineering, Chang Gung University

• Chiu H‐c

  National Central Univ. Jungli Twn

• Tsai Yao-tsung

  Dep. Of Electrical Engineering National Central University

• Chien Feng-tsun

  Dept. Of Electronics Engineering National Chiao Tung University

• Tsai Yao-Tsung

  Dept. of Electrical Engineering, National Central University

• Tsai Yao-tsung

  Dept. Of Electrical Engineering National Central University

• Tsai Yao-tsung.

  Department Of Electrical Engineering National Central University

• Chiu Hsien-chin

  The Department Of Electrical Engineering National Central University

• Wang Chi

  Dept. Of Electronic Engineering Feng Chia University

• WANG Chi-Ling

  Dept. of Electronic Engineering, Feng Chia University

• Yin Jin-Mu

  Dept. of Electronic Engineering, Feng Chia University

• Chien Feng

  Dept. of Electronics Engineering, National Chiao Tung University

• Yin Jin-mu

  Dept. Of Electronic Engineering Feng Chia University

• Chien Feng

  Dept. Of Electronic Engineering Feng-chia University

• Wu Chih-wei

  Dept. Of Electronics Engineering National Chiao Tung University

• Fang Chin-Mu

  Dept. of Electronic Engineering, Feng-Chia University

• Liao Chien-nan

  Dep. Of Electrical Engineering National Central University

• Fang Chin-mu

  Dep. Of Electronic Engineering Feng Chia University

• CHAN Yi-Jen

  Dept. of Electrical Engineering, National Central University

• Chan Y‐j

  Dept. Of Electrical Engineering National Central University

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著作論文

• A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Compound Semiconductor and Power Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
• High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III,AWAD2006)
• High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III)
• High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs
• Low gate leakage current HEMTs by a new airbridge gate and a liquid oxidization surface (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Low gate leakage current HEMTs by a new airbridge gate and a liquid oxidization surface (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006)
• The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006)
• High ruggedness power MOSFET design by a source RTA process (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• High ruggedness power MOSFET design by a source RTA process (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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