High ruggedness power MOSFET design by a source RTA process (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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概要

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• Vertical double diffused Power MOSFETs require a specified breakdown voltage, low on resistance, high switching speed, and a large safe operation area. In addition, most of these applications require the MOSFETs can be switched on and off with an inductive load. Under this condition, the MOSFET must sustain a great deal of stress without causing destructive failure and this ability is called "ruggedness" of the device. However, we found the double diffused process will sacrifice its ruggedness performance owing to the large source area. In this study, double diffused-process was not applied in this device. We use the source RTA process and improve the device ruggedness. We also use the ISE simulator to simulate and compare the proposed and conventional structure as well as their doping profiles. It is shown that the source RTA structure can reduce the parasitic BJT effect effectively, and therefore, improving the device's avalanche energy capability, which is required for inductive load circuits.

• 社団法人電子情報通信学会の論文
• 2007-06-18

著者

• LIAO Chien-Nan

  Dept. of Electrical Engineering, National Central University

• Wu Chih-wei

  Dept. Of Electronics Engineering National Chiao Tung University

• Tsai Yao-tsung

  Dep. Of Electrical Engineering National Central University

• Chien Feng-tsun

  Dept. Of Electronics Engineering National Chiao Tung University

• Liao Chien-nan

  Dept. Of Electrical Engineering National Central University

• Liao Chien-nan

  Department Of Electrical Engineering National Central University

• Tsai Yao-Tsung

  Dept. of Electrical Engineering, National Central University

• Tsai Yao-tsung

  Dept. Of Electrical Engineering National Central University

• Tsai Yao-tsung.

  Department Of Electrical Engineering National Central University

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