High Performance Power MOSFETs by Wing-cell Structure Design (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
スポンサーリンク
概要
- 論文の詳細を見る
Vertical Power MOSFETs are widely designed by either squared (closed) cell or stripe (linear) cell geometry. Each one owns its advantages over the other one. General speaking, closed cell design have lower on resistance but higher gate charge characteristics than the linear one. In this study, we propose, fabricate, and analyze a "wing cell" structure Power MOSFET, which can have lower on resistance and lower gate charge performances than the closed cell structure. In addition, the wing cell design can avoid the "closed concept" patents.
- 社団法人電子情報通信学会の論文
- 2005-06-21
著者
-
Chiu Hsien
Dept. Of Electronic Engineering Chang Gung University
-
Wang Chi
Dept. Of Electronic Engineering Feng Chia University
-
WANG Chi
Department of Obstetrics and Gynaecology
-
Liao Chien
Dep. Of Electrical Engineering National Central University
-
Chien Feng
Department of Electronic Engineering, Feng Chia University
-
Liao Chien
Department of Electronic Engineering, Feng Chia University
-
Chiu H‐c
National Central Univ. Jungli Twn
-
Chien Feng‐tso
Dep. Of Electronic Engineering Feng Chia University
-
Wang Chi
Department Of Obstetrics & Gynaecology The Chinese University Of Hong Kong
-
Chien Feng-tso
Department Of Electronic Engineering Feng Chia University
-
Chien Feng-tso
The R&d Dept. Chino-excel Technology Corp.:the Department Of Electrical Engineering Feng Chia Un
-
Liao Chien-nan
Dept. Of Electrical Engineering National Central University
-
Liao Chien-nan
Department Of Electrical Engineering National Central University
-
Fang Chin-mu
Department Of Electronic Engineering Feng-chia University
-
Fang Chin-mu
Dept. Of Electronic Engineering Feng-chia University
-
Chiu Hsien-chin
The Department Of Electrical Engineering National Central University
-
Wang Chi
Department Of Chemical Engineering National Taiwan University
-
Chien Feng
Department Of Electronic Engineering Feng-chia University
-
Wang Chi-Ling
Department of Electrical Engineering, Feng-Chia University
関連論文
- Method to determine stability and recovery of carboprost and misoprostol in infusion preparations
- Measuring triamcinolone acetonide in aqueous humor by gas chromatography-electron-capture negative-ion mass spectrometry
- Determination of catechins and catechin gallates in tissues by liquid chromatography with coulometric array detection and selective solid phase extraction
- A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Compound Semiconductor and Power Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III,AWAD2006)
- High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III)
- High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs
- High Performance Power MOSFETs by Wing-Cell Structure Design(Si Devices and Processes,Fundamental and Application of Advanced Semiconductor Devices)
- High Performance Power MOSFETs by Wing-cell Structure Design (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- High Performance Power MOSFETs by Wing-cell Structure Design (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Device Linearity and Gate Voltage Swing Improvement by Al_Ga_As/In_Ga_As Double Doped-Channel Design (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- High Ruggedness Power MOSFET Design by a Self-Align p^+ Process(Power Devices, Fundamental and Application of Advanced Semiconductor Devices)
- A Novel High Ruggedness Power MOSFET With a Planar Oxide Deep P+ Implant Structure
- InGaP/InGaAs DCFETs with Drain and Source Recess Process
- High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application
- A Novel Power MOSFET Structure with Split P-well and Split Poly Design
- A Novel Power MOSFET Structure with Split P-well and Split Poly Design
- The Analysis of the Floating Field Limiting Ring and Field Plate(Session6: Power Devices)
- Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET(Session6: Power Devices)
- The Analysis of the Floating Field Limiting Ring and Field Plate(Session6: Power Devices)
- Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET(Session6: Power Devices)
- Low gate leakage current HEMTs by a new airbridge gate and a liquid oxidization surface (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low gate leakage current HEMTs by a new airbridge gate and a liquid oxidization surface (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Novel Vacuum Encapsulation Applied for Improving Short-Channel Immunity on Poly-Si Thin Film Transistors
- High Power Density and Large Voltage Swing of Enhancement-Mode Al_Ga_As/InGaAs Pseudomorphic High Electron Mobility Transistor for 3.5 V L-Band Applications
- High Power In_0.49Ga_0.51P/In_0.15Ga_0.85As Heterostructure Doped-Channel FETs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006)
- The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006)
- Discrepancy in Cake Characteristic Measurement: Compression-Permeability Cell
- High ruggedness power MOSFET design by a source RTA process (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High ruggedness power MOSFET design by a source RTA process (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High performance bottom-gated poly-Si thin film transistors employing novel extended metal-pad (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High performance bottom-gated poly-Si thin film transistors employing novel extended metal-pad (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low switching loss power MOSFET with dual gate structure (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low switching loss power MOSFET with dual gate structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Session 6B Power Devices,AWAD2006)
- A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Session 6B Power Devices,AWAD2006)
- Design of Optimum Power Insulated-Gate Bipolar Transistor Using Response Surface Method
- Design of Optimum the Insulator Gate Bipolar Transistor using Response Surface Method with Cluster Analysis
- An Analytical Model for Silicon-on-Insulator Reduced Surface Field Devices with Semi-Insulating Polycrystalline Silicon Shielding Layer
- Optical Properties of Heavily Mg-Doped p-GaN Films Prepared by Reactive Ion Etching
- Study of Drain Alloy for Antimony Substrate Vertical High Voltage Power Metal Oxide Semiconductor Field Effect Transistors