An Analytical Model for Silicon-on-Insulator Reduced Surface Field Devices with Semi-Insulating Polycrystalline Silicon Shielding Layer
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概要
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An analytical model is presented to determine the potential and electric field distribution along the semiconductor surface of new silicon-on-insulator (SOI) reduced surface field (RESURF) device. The SOI structure is characterized by a semi-insulating polycrystalline silicon (SIPOS) layer inserted between a silicon layer and a buried oxide. An improvement in the breakdown voltage due to the presence of the SIPOS shielding layer is demonstrated. Numerical simulations using medici are shown to support the analytical model.
- 2008-07-25
著者
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Chien Feng-tso
Department Of Electronic Engineering Feng Chia University
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Tsai Yao-Tsung
Department of Electrical Engineering, National Central University
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Liao Chien-Nan
Department of Electrical Engineering, National Central University, 300 Jhongda Rd., Jhongli 320, Taoyuan, Taiwan, R.O.C.
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Chien Feng-Tso
Department of Electronic Engineering, Feng Chia University, 100 Wenhwa Rd., Seatwen, Taichung 407, Taiwan, R.O.C.
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Ho Chi-Hon
Department of Electrical Engineering, National Central University, 300 Jhongda Rd., Jhongli 320, Taoyuan, Taiwan, R.O.C.
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Liao Chieln-Nan
Department of Electrical Engineering, National Central University, 300 Jhongda Rd., Jhongli 320, Taoyuan, Taiwan, R.O.C.
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Tsai Yao-Tsung
Department of Electrical Engineering, National Central University, 300 Jhongda Rd., Jhongli 320, Taoyuan, Taiwan, R.O.C.
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