Study of Drain Alloy for Antimony Substrate Vertical High Voltage Power Metal Oxide Semiconductor Field Effect Transistors

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概要

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• An antimony (Sb)-doped substrate is used to fabricate high voltage power metal oxide semiconductor field effect transistor (MOSFET) to prevent out-doping phenomenon. Since the contact resistance of Sb-doped substrate is higher than that of the phosphorus (P) and arsenic (As)-doped substrates, which are widely used for low breakdown voltage power MOSFETs, devices that are fabricated with an Sb substrate have a higher source–drain forward voltage ($V_{\text{SD}}$). The increased $V_{\text{SD}}$ is associated with power loss while the device is under switching in an inductive load bridge circuit. In this work, devices were baked at different temperatures for various times to reduce the $V_{\text{SD}}$. The $V_{\text{SD}}$ was efficiently reduced at 300 °C after 6 h baking.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2008-04-25

著者

• Chien Feng-tso

  Department Of Electronic Engineering Feng Chia University

• Liao Chien-nan

  Department Of Electrical Engineering National Central University

• Tsai Yao-Tsung

  Department of Electrical Engineering, National Central University

• Liao Chien-Nan

  Department of Electrical Engineering, National Central University, Jhongli 320, Taiwan, R.O.C.

• Chien Feng-Tso

  Department of Electronic Engineering, Feng Chia University, Taichung 407, Taiwan, R.O.C.

• Chen Chii-Wen

  Department of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 304, Taiwan, R.O.C.

• Tsai Yao-Tsung

  Department of Electrical Engineering, National Central University, Jhongli 320, Taiwan, R.O.C.

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