Design of Optimum Power Insulated-Gate Bipolar Transistor Using Response Surface Method

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概要

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• The insulated-gate bipolar transistor (IGBT) is one of the most promising power switching devices. The purpose of this study is to develop a response surface method (RSM) model to design an optimum IGBT device. This RSM model is developed based upon the fabrication simulator, SSUPREM IV, and the device simulator. ATLAS II, which simulate the device characteristics. With the aid of design of experiment (DOE). RSM is used to optimize the on-resistance and breakdown voltage performance of IGBT and to investigate the relationships of the optimized design with various device parameters. This study is useful in the design of optimum IGBT devices.

• 社団法人応用物理学会の論文
• 2002-05-15

著者

• Wang C‐l

  Feng Chia Univ. Taichung Twn

• Wang Chi-ling

  Department Of Electronic Engineering Feng Chia University

• Wang Chi-Ling

  Department of Electrical Engineering, Feng-Chia University

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• Design of Optimum Power Insulated-Gate Bipolar Transistor Using Response Surface Method
• Design of Optimum the Insulator Gate Bipolar Transistor using Response Surface Method with Cluster Analysis

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