Design of Optimum the Insulator Gate Bipolar Transistor using Response Surface Method with Cluster Analysis

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概要

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• In this paper, a statistical methodology that can be used for the optimization of the Insulator Gate Bipolar Transistor (IGBT) devices is proposed. This is achieved by integrating the response surface method (RSM) with cluster analysis, weighted composite method and genetic algorithm (GA). The device characteristic of IGBT was simulated based upon the fabrication simulator, ATHENA, and the device simulator, ATLAS. This methodology, yielded another way to investigate the IGBT device and to make a decision in the tradeoff between the breakdown voltage and the on-resistance. In this methodology, we also show how to use cluster analysis to determine the dominant factors that are not visible in the screening of all experiments.

• 2004-03-15

著者

• Lai Ming-hung

  Department Of Electrical Engineering Feng Chia University

• Wang Chi-Ling

  Department of Electrical Engineering, Feng-Chia University

• Lai Ming-Hung

  Department of Electrical Engineering, Feng Chia University, 100 Wenhwa Rd., Seatwen, Taichung, Taiwan, R.O.C.

• Yeh Chao-Yu

  Department of Electronic Engineering, Feng Chia University, 100 Wenhwa Rd., Seatwen, Taichung, Taiwan, R.O.C.

• Huang Sy-Ruen

  Department of Electrical Engineering, Feng Chia University, 100 Wenhwa Rd., Seatwen, Taichung, Taiwan, R.O.C.

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• Design of Optimum Power Insulated-Gate Bipolar Transistor Using Response Surface Method
• Design of Optimum the Insulator Gate Bipolar Transistor using Response Surface Method with Cluster Analysis

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