Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))

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概要

• 論文の詳細を見る

• In this paper, the P-channel Power MOSFET with a thin gate-oxide (200Å) threshold voltage (Vth) failure mechanism has been discussed. The Vth failure was observed by a heavy source implant for a P-type surface channel enhanced mode Power MOSFET. The heavy boron implant induces a penetration through P+ doped poly-silicon Power MOSFET has also been discussed. In general, the boron penetration exponentially increases with a decreased oxide thickness. The SEM and simulation data all show the well junction profile was re-distributed by the boron penetration. The measured data shows the boron penetration can be the prime contributor to PMOS Vth variation.

• 社団法人電子情報通信学会の論文
• 2004-06-24

著者

• Cheng Ching

  R&d Dept. Chino-excel Technology Corp.

• SU Shih-Tzung

  R&D Dept., Chino-Excel Technology Crop.

• CHENG Ching-Ling

  R&D Dept., Chino-Excel Technology Crop.

• SU Shin-Tzung

  R&D Dept., Chino-Excel Technology Corp.

• TU Kou-Way

  R&D Dept., Chino-Excel Technology Corp.

• Chien Feng-Tso

  R&D Dept. Chino-Excel Technology Corp.

• Tu Kou

  R&d Dept. Chino-excel Technology Corp.

• Chien Feng‐tso

  Dep. Of Electronic Engineering Feng Chia University

• Su Shih

  R&d Dept. Chino-excel Technology Corp.

• Chien Feng-tso

  The R&d Dept. Chino-excel Technology Corp.:the Department Of Electrical Engineering Feng Chia Un

• Fang Chin-mu

  Department Of Electronic Engineering Feng-chia University

• Fang Chin-mu

  Dept. Of Electronic Engineering Feng-chia University

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