InGaP/InGaAs DCFETs with Drain and Source Recess Process
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-09-15
著者
-
CHIEN Feng-Tso
Dept. of Electronic Engineering, Feng Chia University
-
Yin Jin-Mu
Dept. of Electronic Engineering, Feng Chia University
-
Cheng Ching
R&d Dept. Chino-excel Technology Corp.
-
LAI Ming-Hung
R&D Dept., Chino-Excel Technology Crop.
-
CHENG Ching-Ling
R&D Dept., Chino-Excel Technology Crop.
-
SU Shin-Tzung
R&D Dept., Chino-Excel Technology Corp.
-
TU Kou-Way
R&D Dept., Chino-Excel Technology Corp.
-
Yin Jin-mu
Dept. Of Electronic Engineering Feng Chia University
-
Lai Ming
R&d Dept. Chino-excel Technology Corp.
-
Tu Kou
R&d Dept. Chino-excel Technology Corp.
-
Chien Feng‐tso
Dep. Of Electronic Engineering Feng Chia University
-
Su Shih
R&d Dept. Chino-excel Technology Corp.
-
Chien Feng-tso
The R&d Dept. Chino-excel Technology Corp.:the Department Of Electrical Engineering Feng Chia Un
-
Fang Chin-mu
Department Of Electronic Engineering Feng-chia University
-
Fang Chin-mu
Dept. Of Electronic Engineering Feng-chia University
関連論文
- A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Compound Semiconductor and Power Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III,AWAD2006)
- High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III)
- High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs
- High Performance Power MOSFETs by Wing-Cell Structure Design(Si Devices and Processes,Fundamental and Application of Advanced Semiconductor Devices)
- High Performance Power MOSFETs by Wing-cell Structure Design (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- High Performance Power MOSFETs by Wing-cell Structure Design (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Device Linearity and Gate Voltage Swing Improvement by Al_Ga_As/In_Ga_As Double Doped-Channel Design (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- High Ruggedness Power MOSFET Design by a Self-Align p^+ Process(Power Devices, Fundamental and Application of Advanced Semiconductor Devices)
- A Novel High Ruggedness Power MOSFET With a Planar Oxide Deep P+ Implant Structure
- InGaP/InGaAs DCFETs with Drain and Source Recess Process
- High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Boron Penetration study of P channel Power MOSFET for Low Gate Driving Application
- A Novel Power MOSFET Structure with Split P-well and Split Poly Design
- A Novel Power MOSFET Structure with Split P-well and Split Poly Design
- The Analysis of the Floating Field Limiting Ring and Field Plate(Session6: Power Devices)
- Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET(Session6: Power Devices)
- The Analysis of the Floating Field Limiting Ring and Field Plate(Session6: Power Devices)
- Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET(Session6: Power Devices)
- Low gate leakage current HEMTs by a new airbridge gate and a liquid oxidization surface (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low gate leakage current HEMTs by a new airbridge gate and a liquid oxidization surface (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006)
- The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006)
- High performance bottom-gated poly-Si thin film transistors employing novel extended metal-pad (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High performance bottom-gated poly-Si thin film transistors employing novel extended metal-pad (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low switching loss power MOSFET with dual gate structure (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low switching loss power MOSFET with dual gate structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Session 6B Power Devices,AWAD2006)
- A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Session 6B Power Devices,AWAD2006)