Lai Ming | R&d Dept. Chino-excel Technology Corp.

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概要

• LAI Ming-Hungの詳細を見る
• 同名の論文著者
• R&d Dept. Chino-excel Technology Corp.の論文著者

関連著者

• Cheng Ching

  R&d Dept. Chino-excel Technology Corp.

• Lai Ming

  R&d Dept. Chino-excel Technology Corp.

• Chien Feng‐tso

  Dep. Of Electronic Engineering Feng Chia University

• Su Shih

  R&d Dept. Chino-excel Technology Corp.

• Chien Feng-tso

  The R&d Dept. Chino-excel Technology Corp.:the Department Of Electrical Engineering Feng Chia Un

• Fang Chin-mu

  Department Of Electronic Engineering Feng-chia University

• LAI Ming-Hung

  R&D Dept., Chino-Excel Technology Crop.

• CHENG Ching-Ling

  R&D Dept., Chino-Excel Technology Crop.

• Tu Kou

  R&d Dept. Chino-excel Technology Corp.

• Fang Chin-mu

  Dept. Of Electronic Engineering Feng-chia University

• SU Shih-Tzung

  R&D Dept., Chino-Excel Technology Crop.

• SU Shin-Tzung

  R&D Dept., Chino-Excel Technology Corp.

• TU Kou-Way

  R&D Dept., Chino-Excel Technology Corp.

• CHIEN Feng-Tso

  Dept. of Electronic Engineering, Feng Chia University

• Chien Feng-Tso

  R&D Dept. Chino-Excel Technology Corp.

• Yin Jin-Mu

  Dept. of Electronic Engineering, Feng Chia University

• Chien Feng

  Dept. of Electronics Engineering, National Chiao Tung University

• LAI Ming

  R&D Dept., Chino-Excel Technology Corp.

• SU Shih

  R&D Dept., Chino-Excel Technology Corp.

• TU Kou

  R&D Dept., Chino-Excel Technology Corp.

• CHENG Ching

  R&D Dept., Chino-Excel Technology Corp.

• Yin Jin-mu

  Dept. Of Electronic Engineering Feng Chia University

• Chien Feng

  Dept. Of Electronic Engineering Feng-chia University

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著作論文

• High Ruggedness Power MOSFET Design by a Self-Align p^+ Process(Power Devices, Fundamental and Application of Advanced Semiconductor Devices)
• A Novel High Ruggedness Power MOSFET With a Planar Oxide Deep P+ Implant Structure
• InGaP/InGaAs DCFETs with Drain and Source Recess Process
• High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• High Ruggedness Power MOSFET Design by a Self-Align P+ Process(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))

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